GaN device market to grow at 24.6% to $2.2bn in 2019: Transparency Market Research

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According to a new report GaN Semiconductor Devices (Power semiconductors, Opto semiconductors) Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013-2019’ from Transparency Market Research, the market will increase from $379.82m in 2012 to $2,203.73m by 2019, rising at a compound annual growth rate (CAGR) of 24.6% from 2013 to 2019.

Source : http://www.transparencymarketresearch.com/gallium-nitride.html

North America was the largest contributor in 2012, accounting for 32.1% of the GaN device market, followed by Europe, Asia Pacific, and the rest of the world (RoW). However, Asia Pacific is expected to be the fastest-growing market during the forecast period, growing at a CAGR of 27.7% from 2013 to 2019, due mainly to the rapid growth in the electronic industry in Asia Pacific.

The growing demand for high-speed, high-temperature and power-handling capabilities has made the semiconductor industry rethink the designs and materials used in semiconductors, notes the report. As various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. Due to its unique characteristics (such as superior noise factor, high maximum current, high breakdown voltage, and high oscillation frequency), GaN is a unique material of choice for numerous applications such as military, aerospace and defense sector, automotive sector and high-power applications such as industrial, solar, power and wind, says the report. GaN is also power efficient, as it requires less heat-sink compared to silicon.

Growing application areas as well as increased demand from the military is the major driving force for the growth of the GaN device market. The increase in demand is mainly due to the significant reductions in weight and size of devices achievable by using GaN. In addition, developments in improving the breakdown voltage of GaN are expected to boost usage in the field of electro-mobility.

In 2012, optoelectronic semiconductors represented the main product type and accounted for 96.6% of the GaN device market, due mainly to adoption of GaN opto semiconductors in military, aerospace, defense and consumer electronics sector. However, the power semiconductor segment is expected to grow the fastest during the forecast period, due mainly to the rising need for high-power devices in industrial applications.

Among various applications, the military, defense and aerospace sector held the highest market share in 2012, at $81.68m. Consumer electronics was second largest, followed by the ICT and automotive sectors. However, with the introduction of 4G networks, demand for high-power transistors and base-stations is expected to rise, so demand for GaN power semiconductors in ICT is expected to grow the fastest.

The report cites major players among GaN device makers as Fujitsu Ltd (Japan), GaN Systems Inc (Canada), Freescale Semiconductors Inc (USA), International Rectifier Corp (USA), Cree Inc (USA), Nichia Corp (Japan) and RF Micro Devices Inc (USA).

GaN Semiconductor Device Market, by product type

Power semiconductors
Schottky Diode
Metal Oxide Semiconductor Field Effect Transistor (MOSFETs)
High Electron Mobility Transistors (HEMTs)
Others (Rectifiers, other advanced transistor types)
Opto semiconductors
Light Emitting Diodes
Laser Diodes

GaN Semiconductor Device Market, by application


Computer Sector
ICT Sector
Automotive Sector
Military, Aerospace and Defense
Consumer Electronics
Medical
Others

GaN Semiconductor Device Market, by geography

North America
Europe
Asia Pacific
Rest of the World

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Table of content

Chapter 1 Preface
1.1 Report description and scope
1.2 Research methodology
1.2.1 Key data points from secondary sources
1.2.2 Key data points from primary sources
1.2.3 Models

Chapter 2 Executive Summary
2.1 Snapshot for Gallium Nitride (GaN) semiconductor devices market

CHAPTER 3 Gallium Nitride (GaN) Semiconductor Devices Market Analysis

3.1 Market definition
3.2 Market trends and future outlook, 2013 – 2019
3.3 Market dynamics
3.3.1 Drivers
3.3.1.1 Growing application areas for Gallium Nitride power semiconductors
3.3.1.2 Demand for high performance device from defense services
3.3.2 Restraints
3.3.2.1 High cost of pure Gallium Nitride
3.3.3 Opportunities
3.3.3.1 Powering the next-generation Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)
3.4 Value chain analysis for GaN semiconductor devices market
3.5 Gallium Nitride (GaN) semiconductor devices market attractiveness
3.6 Porter’s five force analysis
3.6.1 Bargaining power of suppliers
3.6.2 Bargaining power of buyers
3.6.3 Rivalry among existing competitors
3.6.4 Threat of new entrants
3.6.5 Threat from substitutes

Chapter 4 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Product 2013 – 2019
4.1 Introduction
4.2 Power semiconductors
4.2.1 Global power semiconductors market size and forecast, by products 2012 – 2019 (USD million)
4.2.2 Schottky diode
4.2.3 Metal oxide semiconductor field effect transistor (MOSFETs)
4.2.4 High electron mobility transistors (HEMTs)
4.2.5 Others (rectifiers, other advanced transistor types)
4.3 Opto semiconductors
4.3.1 Global GaN opto semiconductor devices market size and forecast, by products, 2012 - 2019 (USD million)
4.3.2 Light emitting diodes
4.3.3 Laser diodes

Chapter 5 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Applications 2013 – 2019
5.1 Introduction
5.2 Computer sector
5.3 ICT sector
5.4 Automotive sector
5.5 Military, aerospace and defense
5.6 Consumer electronics
5.7 Medical
5.8 Others (Industrial, power, solar and wind sectors)

Chapter 6 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Geography 2013 - 2019
6.1 Introduction
6.2 North America GaN semiconductor devices market
6.2.1 North America GaN semiconductor device market size and forecast, 2011 – 2019 (USD million)
6.2.2 North America GaN semiconductor devices market size and forecast, by product type 2012 – 2019 (USD million)
6.2.3 North America GaN power semiconductor devices market size and forecast, by product, 2012 – 2019 (USD million)
6.2.4 North America GaN opto semiconductor devices market size and forecast, by product, 2012 – 2019 (USD million)
6.2.5 North America GaN semiconductor devices market size and forecast, by applications, 2012 – 2019 (USD million)
6.3 Europe GaN semiconductor devices market
6.3.1 Europe GaN semiconductor device market size and forecast, 2011 – 2019 (USD million)
6.3.2 Europe GaN semiconductor devices market size and forecast, by product type, 2012 – 2019 (USD million)
6.3.3 Europe GaN power semiconductor devices market size and forecast, by product, 2012 – 2019 (USD million)
6.3.4 Europe GaN opto semiconductor devices market size and forecast, by product, 2012 – 2019 (USD million)
6.3.5 Europe GaN semiconductor devices market size and forecast, by applications, 2012 – 2019 (USD million)
6.4 Asia Pacific GaN semiconductor devices market
6.4.1 Asia Pacific GaN semiconductor device market size and forecast, 2011 – 2019 (USD million)
6.4.2 Asia Pacific GaN semiconductor devices market size and forecast, by product type, 2012 – 2019 (USD million)
6.4.3 Asia Pacific GaN power semiconductor devices market size and forecast, by product, 2012 – 2019 (USD million)
6.4.4 Asia Pacific GaN opto semiconductor devices market size and forecast, by product, 2012 – 2019 (USD million)
6.4.5 Asia Pacific GaN semiconductor devices market size and forecast, by applications, 2012 – 2019 (USD million)
6.5 Rest of the World (RoW) GaN semiconductor devices market
6.5.1 RoW GaN semiconductor device market size and forecast, 2011 – 2019 (USD million)
6.5.2 RoW GaN semiconductor device market size and forecast, by product, 2011 – 2019 (USD million)
6.5.3 RoW GaN power semiconductor device market size and forecast, by product, 2011 – 2019 (USD million)
6.5.4 Rest of the world GaN opto semiconductor devices market size and forecast, by product, 2012 – 2019 (USD million)
6.5.5 RoW GaN semiconductor device market size and forecast, by applications, 2011 – 2019 (USD million)

Chapter 7 Company Profiles
7.1 Fujitsu Limited
7.1.1 Company overview
7.1.2 Financial overview
7.1.3 Business strategies
7.1.4 Recent developments
7.2 GaN Systems Inc.
7.2.1 Company overview
7.2.2 Financial overview
7.2.3 Business strategies
7.2.4 Recent developments
7.3 Freescale Semiconductor Inc.
7.3.1 Company overview
7.3.2 Financial overview
7.3.3 Business strategies
7.3.4 Recent developments
7.4 Efficient Power Conversion Corporation
7.4.1 Company overview
7.4.2 Financial overview
7.4.3 Business strategies
7.4.4 Recent developments
7.5 International Rectifier
7.5.1 Company overview
7.5.2 Financial overview
7.5.3 Business strategies
7.5.4 Recent developments
7.6 NXP Semiconductors N.V.
7.6.1 Company overview
7.6.2 Financial overview
7.6.3 Business strategies
7.6.4 Recent developments
7.7 Renesas Electronics Corporation
7.7.1 Company overview
7.7.2 Financial overview
7.7.3 Business strategies
7.7.4 Recent developments
7.8 Toshiba Corporation
7.8.1 Company overview
7.8.2 Financial overview
7.8.3 Business strategies
7.8.4 Recent developments
7.9 Texas Instruments Inc.
7.9.1 Company overview
7.9.2 Financial overview
7.9.3 Business strategies
7.9.4 Recent developments
7.10 International Quantum Epitaxy plc
7.10.1 Company overview
7.10.2 Financial overview
7.10.3 Business strategies
7.10.4 Recent developments
7.11 Nichia Corporation
7.11.1 Company overview
7.11.2 Financial overview
7.11.3 Business strategies
7.11.4 Recent developments
7.12 Cree Inc.
7.12.1 Company overview
7.12.2 Financial overview
7.12.3 Business strategies
7.12.4 Recent developments
7.13 RF Micro Devices Inc.
7.13.1 Company overview
7.13.2 Financial overview
7.13.3 Business strategies
7.13.4 Recent developments

Topic : Global Information
Genre : News

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